H01s5/00
WebA regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the … WebH01S5/00 — Semiconductor lasers H01S5/10 — Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
H01s5/00
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WebH01S5/00 — Semiconductor lasers H01S5/20 — Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers WebH01S5/00 — Semiconductor lasers; H01S5/10 — Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region; H01S5/14 — External cavity lasers; H01S5/141 — External cavity lasers using a wavelength selective device, e.g. a ...
WebH01S5/00 — Semiconductor lasers; H01S5/10 — Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region; H01S5/18 — Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities Web本发明涉及一种带有V型模式扩展层的AlGaInP红光半导体激光器及其制备方法。所述激光器由下至上依次包括GaAs衬底、GaAs缓冲层、Ga0.5In0.5P下过渡层、Al0.5In0.5P第一下限制层、组分V型变化的(Ala1Ga1‑a1)b1In1‑b1P模式扩展层、Al0.5In0.5P第二下限制层、(Alx1Ga1‑x1)y1In1‑y1P下波导层、Ga1‑x2Inx2P第一量子阱 ...
WebH01S5/00 — Semiconductor lasers; H01S5/06 — Arrangements for controlling the laser output parameters, e.g. by operating on the active medium; H01S5/068 — Stabilisation of laser output parameters; H01S5/06812 — Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V ... WebMar 8, 2024 · Snap Action Switches. Factory Pack Quantity: Factory Pack Quantity: 1200. Subcategory: Switches. Unit Weight: 0.176370 oz. Select at least one checkbox above to …
WebH01S5/02.Structural details or components not essential to laser action [7] HB: CC: 5F173: H01S5/022..Mountings; Housings [7] HB: CC: 5F173: H01S5/02208...characterised by …
WebA multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the protruding streaks and the contact electrodes. The contact electrodes and the pad … fit a window sillWebH01S5/00 — Semiconductor lasers; H01S5/10 — Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region; H01S5/14 — External cavity lasers; H01S5/141 — External cavity lasers using a wavelength selective device, e.g. a ... fitb19WebOct 27, 2024 · 本发明提供了一种VCSEL芯片模组及其微透镜和制作方法，涉及VCSEL芯片技术领域，包括微透镜本体，所述微透镜本体至少拥有一个光学面，微透镜本体的光学面工作距离t≥5a，a为光源发射孔直径；微透镜本体和光源发射孔一一对应。 canfield athletic directorWebOct 19, 2024 · 1.一种dtof传感器封装结构， 其特征在于， 所述封装结构中包括：基板， 在所述基板的上表面依次设置有第一芯片和第二芯片， 所述第一芯片用于发射光源；所述第二芯片包括： 接收spad单元和发射spad单元， 在所述第二芯片上靠近所述第一芯片处布置发射spad单元， 在所述第二芯片上远离所述第一 ... fit a wood burning stoveWebH01S5/00 — Semiconductor lasers; H01S5/06 — Arrangements for controlling the laser output parameters, e.g. by operating on the active medium; H01S5/065 — Mode locking; Mode suppression; Mode selection ; Self pulsating; H01S5/0651 — Mode control; H01S5/0652 — Coherence lowering or collapse, e.g. multimode emission by additional … fit ayurvedaWebThe present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the … fitaz healthWebH01S5/00. Google Patents. 10.2 CPC. Help. New Window. H01S5/04256. H01S5/1021 (inventive) H01S5/22. H01S5/06256 (inventive, first) H01S5/0265 (inventive) … canfield athletic boosters